Discrete Semiconductor Products

PJC7404_R1_00001

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SOT-323, MOSFET

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Discrete Semiconductor Products

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SOT-323, MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJC7404_R1_00001

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.6 nC
Input Capacitance (Ciss) (Max) @ Vds	92 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	350 mW
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	Vgs (Max)
Panjit International Inc. PJC7404_R1_00001	-55 °C	150 °C	Surface Mount	150 mOhm	350 mW	SC-70 SOT-323	1 A	1 V	92 pF	1.8 V 4.5 V	20 V	N-Channel	1.6 nC	MOSFET (Metal Oxide)	SOT-323	8 V

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General part information

N-Channel 20 V 1A (Ta) 350mW (Ta) Surface Mount SOT-323

Technical documentation and resources