Specification	FQA32N20C

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	2220 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	204 W
Rds On (Max) @ Id, Vgs [Max]	82 mOhm
Supplier Device Package	TO-3PN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQA32N20C Series

Power MOSFET, N-Channel, QFET®, 200 V, 32 A, 82 mΩ, TO-3P

Part	FET Type	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power Dissipation (Max)	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
ON Semiconductor FQA32N20C	N-Channel	82 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	204 W	Through Hole	TO-3PN	110 nC	2220 pF	4 V	10 V	SC-65-3 TO-3P-3	200 V	32 A	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQA32N20C Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.