Discrete Semiconductor Products

SI5903DC-T1-GE3

Obsolete

MOSFET 2P-CH 20V 2.1A 1206-8

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Discrete Semiconductor Products

Obsolete

MOSFET 2P-CH 20V 2.1A 1206-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI5903DC-T1-GE3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	2.1 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	6 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	1.1 W
Rds On (Max) @ Id, Vgs	155 mOhm
Supplier Device Package	1206-8 ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	600 mV

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Power - Max [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Configuration	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI5903DC-T1-GE3	1206-8 ChipFET™	6 nC	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	Logic Level Gate	1.1 W	Surface Mount	2.1 A	2 P-Channel	155 mOhm	600 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 2.1A 1.1W Surface Mount 1206-8 ChipFET™

Technical documentation and resources