Discrete Semiconductor Products

FPF2G120BF07AS

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INSULATED GATE BIPOLAR TRANSISTO

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Discrete Semiconductor Products

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INSULATED GATE BIPOLAR TRANSISTO

Technical Specifications

Parameters and characteristics for this part

Specification	FPF2G120BF07AS

Configuration	3 Independent
Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Cutoff (Max) [Max]	250 µA
IGBT Type	Field Stop
Input	Standard
Mounting Type	Through Hole
NTC Thermistor	True
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	156 W
Supplier Device Package	F2
Vce(on) (Max) @ Vge, Ic	2.2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Input	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Current - Collector Cutoff (Max) [Max]	Configuration	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	NTC Thermistor
ON Semiconductor FPF2G120BF07AS	40 A	156 W	Standard	2.2 V	F2	150 °C	-40 °C	Module	250 µA	3 Independent	Field Stop	650 V	Through Hole
ON Semiconductor FPF2G120BF07AS	40 A	156 W	Standard	2.2 V	F2	150 °C	-40 °C	Module	250 µA	3 Independent	Field Stop	650 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Module Field Stop 3 Independent 650 V 40 A 156 W Through Hole F2

Technical documentation and resources