PSMN9R0-25MLC,115

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TRANS MOSFET N-CH 25V 55A 8-PIN LFPAK EP T/R

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Discrete Semiconductor Products

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TRANS MOSFET N-CH 25V 55A 8-PIN LFPAK EP T/R

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN9R0-25MLC,115

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.7 nC
Input Capacitance (Ciss) (Max) @ Vds	705 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs [Max]	8.65 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Freescale Semiconductor - NXP PSMN9R0-25MLC,115	11.7 nC	N-Channel	MOSFET (Metal Oxide)	20 V	45 W	4.5 V 10 V	8.65 mOhm	25 V	Surface Mount	705 pF	-55 °C	175 ░C	55 A	LFPAK33

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General part information

N-Channel 25 V 55A (Tc) 45W (Tc) Surface Mount LFPAK33

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