Discrete Semiconductor Products

DMN2320UFB4-7B

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TRANS MOSFET N-CH 20V 1A 3-PIN X2-DFN T/R

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Discrete Semiconductor Products

Active

TRANS MOSFET N-CH 20V 1A 3-PIN X2-DFN T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DMN2320UFB4-7B

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.89 nC
Input Capacitance (Ciss) (Max) @ Vds	71 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	520 mW
Rds On (Max) @ Id, Vgs	320 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

N-Channel MOSFET

Part	Power Dissipation (Max)	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMN2320UFB4-7B	520 mW	3-XFDFN	8 V	20 V	-55 °C	150 °C	0.89 nC	Surface Mount	1 A	320 mOhm	MOSFET (Metal Oxide)	71 pF	N-Channel	950 mV	1.8 V 4.5 V

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General part information

N-Channel MOSFET

Technical documentation and resources