Discrete Semiconductor Products

PHB27NQ10T,118

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MOSFET N-CH 100V 28A D2PAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 100V 28A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHB27NQ10T,118

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1240 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	107 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Technology	Vgs (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
Freescale Semiconductor - NXP PHB27NQ10T,118	1240 pF	10 V	50 mOhm	100 V	D2PAK	107 W	Surface Mount	MOSFET (Metal Oxide)	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	N-Channel	30 nC	28 A

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General part information

N-Channel 100 V 28A (Tc) 107W (Tc) Surface Mount D2PAK

Technical documentation and resources