Discrete Semiconductor Products

BY255GP-E3/73

Obsolete

DIODE GEN PURP 1.3KV 3A DO201AD

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 1.3KV 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	BY255GP-E3/73

Capacitance @ Vr, F	40 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	3 çs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1300 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Voltage - Forward (Vf) (Max) @ If	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Speed	Speed	Mounting Type	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division BY255P-E3/73	1.1 V	Standard	150 °C	-55 °C	DO-201AD	3 çs	1300 V	DO-201AD Axial	5 µA	40 pF	Standard Recovery >500ns	200 mA	Through Hole	3 A
Vishay General Semiconductor - Diodes Division BY255GP-E3/73	1.1 V	Standard	175 ░C	-65 C	DO-201AD	3 çs	1300 V	DO-201AD Axial	5 µA	40 pF	Standard Recovery >500ns	200 mA	Through Hole	3 A
Vishay General Semiconductor - Diodes Division BY255P-E3/54	1.1 V	Standard	150 °C	-55 °C	DO-201AD	3 çs	1300 V	DO-201AD Axial	5 µA	40 pF	Standard Recovery >500ns	200 mA	Through Hole	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1300 V 3A Through Hole DO-201AD

Technical documentation and resources