Specification	FFSPF2065A

Capacitance @ Vr, F	1085 pF
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220F-2FS
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

FFSPF2065A Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D1, TO-220F-2L

Part	Package / Case	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)
ON Semiconductor FFSPF2065A	TO-220-2 Full Pack	SiC (Silicon Carbide) Schottky	175 ░C	-55 C	TO-220F-2FS	200 µA	650 V	No Recovery Time	Through Hole	1085 pF	0 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.60
		10	$ 5.15
		100	$ 3.77
		500	$ 3.18

Description

General part information

FFSPF2065A Series

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew