Specification	RN2704,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-353, SC-70-5, 5-TSSOP
Power - Max [Max]	200 mW
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47 kOhms
Supplier Device Package	USV
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

RN2704 Series

Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 47 kΩ/47 kΩ, SOT-353(USV)

Part	Frequency - Transition	Resistor - Base (R1)	Resistor - Emitter Base (R2)	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Power - Max [Max]	Package / Case	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]
Toshiba Semiconductor and Storage RN2704,LF	200 MHz	47 kOhms	47 kOhms	Surface Mount	300 mV	50 V	2 PNP - Pre-Biased (Dual)	200 mW	5-TSSOP SC-70-5 SOT-353	USV	80	100 mA	500 nA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 47 kΩ/47 kΩ, SOT-353(USV)

Technical documentation and resources