Discrete Semiconductor Products

KSB1097RTU

Obsolete

TRANS PNP 60V 7A TO220F-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PNP 60V 7A TO220F-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSB1097RTU

Current - Collector (Ic) (Max) [Max]	7 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220F-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	Transistor Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Power - Max [Max]	Mounting Type	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor KSB1015O	60 V	150 °C	PNP	TO-220-3 Full Pack	100 µA	3 A	9 MHz	25 W	Through Hole	TO-220F-3	1 V	60
ON Semiconductor KSB1098OTU		150 °C	PNP - Darlington	TO-220-3 Full Pack	1 µA			2 W	Through Hole	TO-220F-3	1.5 V		100 V	5 A	3000 hFE
ON Semiconductor KSB1097YTU	60 V	150 °C	PNP	TO-220-3 Full Pack	10 µA	7 A		2 W	Through Hole	TO-220F-3	500 mV	100 hFE
ON Semiconductor KSB1098YTU		150 °C	PNP - Darlington	TO-220-3 Full Pack	1 µA			2 W	Through Hole	TO-220F-3	1.5 V	5000	100 V	5 A
ON Semiconductor KSB1097RTU	60 V	150 °C	PNP	TO-220-3 Full Pack	10 µA	7 A		2 W	Through Hole	TO-220F-3	500 mV	40 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 60 V 7 A 2 W Through Hole TO-220F-3

Technical documentation and resources