Discrete Semiconductor Products

VBO25-16NO2

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BRIDGE RECT 1P 1.6KV 38A FO-A

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Discrete Semiconductor Products

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BRIDGE RECT 1P 1.6KV 38A FO-A

Technical Specifications

Parameters and characteristics for this part

Specification	VBO25-16NO2

Current - Average Rectified (Io)	38 A
Current - Reverse Leakage @ Vr	300 µA
Diode Type	Single Phase
Mounting Type	QC Terminal
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	4-Square, FO-A
Supplier Device Package	FO-A
Technology	Standard
Voltage - Peak Reverse (Max)	1.6 kV

Part	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Diode Type	Technology	Current - Reverse Leakage @ Vr	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case
LITTELFUSE VBO25-12AO2	1.2 kV	38 A	Single Phase	Avalanche	300 µA	FO-A	-40 °C	150 °C	QC Terminal	4-Square FO-A
LITTELFUSE VBO25-16NO2	1.6 kV	38 A	Single Phase	Standard	300 µA	FO-A	-40 °C	150 °C	QC Terminal	4-Square FO-A
LITTELFUSE VBO25-14NO2	1.4 kV	38 A	Single Phase	Standard	300 µA	FO-A	-40 °C	150 °C	QC Terminal	4-Square FO-A
LITTELFUSE VBO25-16AO2	1.6 kV	38 A	Single Phase	Avalanche	300 µA	FO-A	-40 °C	150 °C	QC Terminal	4-Square FO-A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diodes in various packages made for main rectification in 1 phase bridge configurations.

Technical documentation and resources