Discrete Semiconductor Products

IXFN38N100Q2

NRND

MOSFET N-CH 1000V 38A SOT-227

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Discrete Semiconductor Products

NRND

MOSFET N-CH 1000V 38A SOT-227

Technical Specifications

Parameters and characteristics for this part

Specification	IXFN38N100Q2

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7200 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	890 W
Rds On (Max) @ Id, Vgs	250 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	FET Type	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)
IXYS IXFN38N100Q2	N-Channel	SOT-227B	Chassis Mount	5 V	7200 pF	SOT-227-4 miniBLOC	10 V	250 mOhm	38 A	MOSFET (Metal Oxide)	890 W	1000 V	-55 °C	150 °C	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	10	$ 43.99

General part information

N-Channel 1000 V 38A (Tc) 890W (Tc) Chassis Mount SOT-227B

Technical documentation and resources