Discrete Semiconductor Products

MCPF80P06Y-BP

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P-CHANNEL MOSFET,TO-220F

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Discrete Semiconductor Products

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P-CHANNEL MOSFET,TO-220F

Technical Specifications

Parameters and characteristics for this part

Specification	MCPF80P06Y-BP

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	88 nC
Input Capacitance (Ciss) (Max) @ Vds	5810 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	83 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	18 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id
Micro Commercial Components MCPF80P06Y-BP	5810 pF	P-Channel	18 V	60 V	TO-220F	10 mOhm	TO-220-3 Full Pack	10 V	Through Hole	88 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	83 W	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 80A (Tc) 83W Through Hole TO-220F

Technical documentation and resources