Discrete Semiconductor Products

RFD14N05

Obsolete

MOSFET N-CH 50V 14A I-PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 50V 14A I-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	RFD14N05

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	40 nC
Input Capacitance (Ciss) (Max) @ Vds	570 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	48 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor RFD14N05	14 A	570 pF	4 V	IPAK	48 W	20 V	Through Hole	50 V	IPAK TO-251-3 Short Leads TO-251AA	10 V	MOSFET (Metal Oxide)	100 mOhm	N-Channel	40 nC	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 50 V 14A (Tc) 48W (Tc) Through Hole IPAK

Technical documentation and resources