Discrete Semiconductor Products

MPSA44G

Obsolete

HIGH VOLTAGE NPN BIPOLAR TRANSISTOR

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Discrete Semiconductor Products

Obsolete

HIGH VOLTAGE NPN BIPOLAR TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	MPSA44G

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	750 mV
Voltage - Collector Emitter Breakdown (Max)	400 V

High Voltage NPN Bipolar Transistor

Part	Supplier Device Package	Supplier Device Package	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Current - Collector (Ic) (Max) [Max]	Package / Case	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor MPSA44G	TO-92	TO-226	Through Hole	750 mV	NPN	300 mA	TO-226-3 TO-92-3 Long Body	625 mW	400 V	-55 °C	150 °C	500 nA	50 hFE
ON Semiconductor MPSA44

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This High Voltage NPN Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the TO-92 package.

Technical documentation and resources