Specification	FDP16AN08A0

Current - Continuous Drain (Id) @ 25°C	58 A, 9 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	1857 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	135 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDP16AN08A0 Series

N-Channel PowerTrench<sup>®</sup> MOSFET 75V, 58A, 16mΩ

Part	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDP16AN08A0	TO-220-3	N-Channel	-55 °C	175 ░C	MOSFET (Metal Oxide)	135 W	6 V 10 V	Through Hole	75 V	16 mOhm	1857 pF	20 V	42 nC	4 V	TO-220-3	9 A 58 A
ON Semiconductor FDP16AN08A0	TO-220-3	N-Channel	-55 °C	175 ░C	MOSFET (Metal Oxide)	135 W	6 V 10 V	Through Hole	75 V	16 mOhm	1857 pF	20 V	42 nC	4 V	TO-220-3	9 A 58 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel PowerTrench®MOSFET 75 V, 58 A, 16 mΩ

Technical documentation and resources