Discrete Semiconductor Products

SIRA16DP-T1-GE3

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MOSFET N-CH 30V 16A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 30V 16A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIRA16DP-T1-GE3

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2060 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Rds On (Max) @ Id, Vgs	6.8 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.3 V

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SIRA16DP-T1-GE3	-16 V 20 V	-55 °C	150 °C	PowerPAK® SO-8	N-Channel	6.8 mOhm	2060 pF	MOSFET (Metal Oxide)	2.3 V	PowerPAK® SO-8	4.5 V 10 V	Surface Mount	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.99
	Digi-Reel®	1	$ 0.99
	Tape & Reel (TR)	6000	$ 0.22

General part information

N-Channel 30 V 16A (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources