Discrete Semiconductor Products

MJD243T4

Obsolete

4.0 A, 100 V NPN BIPOLAR POWER TRANSISTOR

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Discrete Semiconductor Products

Obsolete

4.0 A, 100 V NPN BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	MJD243T4

Current - Collector (Ic) (Max) [Max]	4 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	40 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	12.5 W
Supplier Device Package	DPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

4.0 A, 100 V NPN Bipolar Power Transistor

Part	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Power - Max [Max]
ON Semiconductor MJD243T4	Surface Mount	40	NPN	300 mV	150 °C	-65 °C	DPAK	40 MHz	100 V	4 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	12.5 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.