Discrete Semiconductor Products

UGF1008G

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Taiwan Semiconductor Corporation

25NS, 10A, 600V, ULTRA FAST RECOVERY RECTIFIER

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Discrete Semiconductor Products

Active

Taiwan Semiconductor Corporation

25NS, 10A, 600V, ULTRA FAST RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	UGF1008G

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Reverse Recovery Time (trr)	25 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Technology	Supplier Device Package	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr
Taiwan Semiconductor Corporation UGF1008G	Standard	ITO-220AB	10 A	1.7 V	Through Hole	200 mA 500 ns	TO-220-3 Full Pack Isolated Tab	150 °C	-55 °C	600 V	25 ns	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 10A Through Hole ITO-220AB

Technical documentation and resources