Discrete Semiconductor Products

IRFS540A

Obsolete

MOSFET N-CH 100V 17A TO220F

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 17A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS540A

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Input Capacitance (Ciss) (Max) @ Vds	1710 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	39 W
Rds On (Max) @ Id, Vgs	52 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)
ON Semiconductor IRFS540A	17 A	78 nC	4 V	52 mOhm	Through Hole	10 V	100 V	39 W	MOSFET (Metal Oxide)	N-Channel	1710 pF	TO-220F-3	TO-220-3 Full Pack	-55 °C	175 ░C
ON Semiconductor IRFS540A	17 A	78 nC	4 V	52 mOhm	Through Hole	10 V	100 V	39 W	MOSFET (Metal Oxide)	N-Channel	1710 pF	TO-220F-3	TO-220-3 Full Pack	-55 °C	175 ░C	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 17A (Tc) 39W (Tc) Through Hole TO-220F-3

Technical documentation and resources