Discrete Semiconductor Products

SICPT30120-BP

LTB

INTERFACE

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Discrete Semiconductor Products

LTB

INTERFACE

Technical Specifications

Parameters and characteristics for this part

Specification	SICPT30120-BP

Capacitance @ Vr, F	2259 pF
Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	60 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247AD
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Supplier Device Package	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Mounting Type	Capacitance @ Vr, F	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)
Micro Commercial Components SICPT30120-BP	1.2 kV	SiC (Silicon Carbide) Schottky	TO-247AD	TO-247-2	175 ░C	-55 C	No Recovery Time	Through Hole	2259 pF	30 A	60 µA	1.7 V	0 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1800	$ 16.15

General part information

Diode 1200 V 30A Through Hole TO-247AD

Technical documentation and resources