Discrete Semiconductor Products

KSA1015YTA

Active

TRANSISTOR,BJT,PNP,50V V(BR)CEO,150MA I(C),TO-92 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

TRANSISTOR,BJT,PNP,50V V(BR)CEO,150MA I(C),TO-92 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	KSA1015YTA

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	400 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

PNP Epitaxial Silicon Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Package / Case	Transistor Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor KSA1015OBU	70 hFE	150 °C	TO-92-3	100 nA	TO-226-3 TO-92-3	PNP	400 mW	50 V	Through Hole	150 mA
ON Semiconductor KSA1015GRBU		150 °C	TO-92-3	100 nA	TO-226-3 TO-92-3	PNP	400 mW	50 V	Through Hole	150 mA	200 hFE
ON Semiconductor KSA1015OTA	70 hFE	150 °C	TO-92-3	100 nA	TO-226-3 TO-92-3	PNP	400 mW	50 V	Through Hole	150 mA
ON Semiconductor KSA1015YBU	120	150 °C	TO-92-3	100 nA	TO-226-3 TO-92-3	PNP	400 mW	50 V	Through Hole	150 mA
ON Semiconductor KSA1015YTA	120	150 °C	TO-92-3	100 nA	TO-226-3 TO-92-3	PNP	400 mW	50 V	Through Hole	150 mA

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General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources