Specification	SSM3K16FS,LF

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9.3 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-416, SC-75
Power Dissipation (Max)	100 mW
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	SSM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1.1 V

SSM3K16FS Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.1 A, 3.0 Ω@4V, SOT-416(SSM)

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage SSM3K16FS,LF	1.5 V	4 V	N-Channel	SSM	20 V	150 °C	SC-75 SOT-416	Surface Mount	1.1 V	100 mA	10 V	MOSFET (Metal Oxide)	100 mW	3 Ohm	9.3 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.1 A, 3.0 Ω@4V, SOT-416(SSM)

Technical documentation and resources