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GPI65007DF56
Discrete Semiconductor Products

GPI65007DF56

Active
GaNPower

GANFET N-CH 650V 7A DFN5X6

GPI65007DF56
Discrete Semiconductor Products

GPI65007DF56

Active
GaNPower

GANFET N-CH 650V 7A DFN5X6

Technical Specifications

Parameters and characteristics for this part

SpecificationGPI65007DF56
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)6 V
FET TypeN-Channel
Gate Charge (Max)2.1 nC
Input Capacitance (Ciss) (Max)76.1 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
TechnologyGaNFET (Gallium Nitride)
Vgs (Max) Negative-12 V
Vgs (Max) Positive7.5 V
Vgs(th) (Max)1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTape & Reel (TR) 1$ 3.50<4d

CAD

3D models and CAD resources for this part

Description

General part information

GPI65007DF56

N-Channel 650 V 7A Surface Mount

Documents

Technical documentation and resources