Discrete Semiconductor Products

FQL50N40

Obsolete

MOSFET N-CH 400V 50A TO264-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 400V 50A TO264-3

Technical Specifications

Parameters and characteristics for this part

Specification	FQL50N40

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	210 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	460 W
Rds On (Max) @ Id, Vgs [Max]	75 mOhm
Supplier Device Package	TO-264-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FQL50N40	460 W	400 V	HPM F2	MOSFET (Metal Oxide)	TO-264-3 TO-264AA	-55 °C	150 °C	N-Channel	210 nC	7500 pF	Through Hole	75 mOhm	30 V	5 V	50 A	10 V
ON Semiconductor FQL50N40	460 W	400 V	TO-264-3	MOSFET (Metal Oxide)	TO-264-3 TO-264AA	-55 °C	150 °C	N-Channel	210 nC	7500 pF	Through Hole	75 mOhm	30 V	5 V	50 A	10 V

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General part information

N-Channel 400 V 50A (Tc) 460W (Tc) Through Hole TO-264-3

Technical documentation and resources