Discrete Semiconductor Products

UG1A-E3/54

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DIODE GEN PURP 50V 1A DO204AL

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Discrete Semiconductor Products

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DIODE GEN PURP 50V 1A DO204AL

Technical Specifications

Parameters and characteristics for this part

Specification	UG1A-E3/54

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	25 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-204AL (DO-41)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	950 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Speed	Reverse Recovery Time (trr)	Technology	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Package / Case	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Capacitance @ Vr, F
Vishay General Semiconductor - Diodes Division UG1A-E3/54	50 V	150 °C	-55 °C	Through Hole	200 mA 500 ns	25 ns	Standard	5 µA	1 A	Axial DO-204AL DO-41	950 mV	DO-204AL (DO-41)
Vishay General Semiconductor - Diodes Division UG1C-M3/54		150 °C	-55 °C	Through Hole	200 mA 500 ns	25 ns	Standard	5 µA	1 A	Axial DO-204AL DO-41	950 mV	DO-204AL (DO-41)	7 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 50 V 1A Through Hole DO-204AL (DO-41)

Technical documentation and resources