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TO-220-3
Discrete Semiconductor Products

FFSB0665A

Active
ON Semiconductor

SILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 6 A, 650 V, D1, D2PAK-2L

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DocumentsDatasheetDatasheet+1
TO-220-3
Discrete Semiconductor Products

FFSB0665A

Active
ON Semiconductor

SILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 6 A, 650 V, D1, D2PAK-2L

Deep-Dive with AI

DocumentsDatasheetDatasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationFFSB0665A
Capacitance @ Vr, F361 pF
Current - Average Rectified (Io)9 A
Current - Reverse Leakage @ Vr200 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Supplier Device PackageTO-263 (D2PAK)
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If1.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.01
10$ 2.53
100$ 2.05
Digi-Reel® 1$ 3.01
10$ 2.53
100$ 2.05
Tape & Reel (TR) 800$ 1.82
1600$ 1.56
2400$ 1.47
5600$ 1.41
NewarkEach 500$ 2.09
1000$ 1.87
2500$ 1.51
5000$ 1.47
ON SemiconductorN/A 1$ 0.90

Description

General part information

FFSB0665A Series

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew