...employing the Schottky Barrier principle in a large area metal-to-silicon power diode.State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Typical applications are ac/dc and dc-dc converters, reverse battery protection, and "Oring" of multiple supply voltages and any other application where performance and size are critical.