Discrete Semiconductor Products

NTA4001NT1G

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SINGLE N-CHANNEL GATE ESD PROTECTION SMALL SIGNAL MOSFET 20V, 238MA, 1.5Ω

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Discrete Semiconductor Products

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SINGLE N-CHANNEL GATE ESD PROTECTION SMALL SIGNAL MOSFET 20V, 238MA, 1.5Ω

Technical Specifications

Parameters and characteristics for this part

Specification	NTA4001NT1G

Current - Continuous Drain (Id) @ 25°C	238 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	20 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-75, SOT-416
Power Dissipation (Max)	300 mW
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	SOT-416, SC-75
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1.5 V

Single N-Channel Gate ESD Protection Small Signal MOSFET 20V, 238mA, 1.5Ω

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Power Dissipation (Max)
ON Semiconductor NTA4001NT1G	20 V	SC-75 SOT-416	3 Ohm	N-Channel	238 mA	20 pF	Surface Mount	10 V	MOSFET (Metal Oxide)	-55 °C	150 °C	2.5 V 4.5 V	SC-75 SOT-416	1.5 V	300 mW

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General part information

Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection

Technical documentation and resources