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RJK0652DPB-00#J5

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NCH POWER MOSFET 60V 35A 7MOHM LFPAK56

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Discrete Semiconductor Products

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NCH POWER MOSFET 60V 35A 7MOHM LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0652DPB-00#J5

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4100 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	55 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 60V 35A 7mohm LFPAK56

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Package / Case	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type
Renesas Electronics Corporation RJK0652DPB-00#J5	7 mOhm	60 V	4100 pF	20 V	SC-100 SOT-669	150 °C	35 A	29 nC	MOSFET (Metal Oxide)	55 W	LFPAK	4.5 V 10 V	Surface Mount	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources