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Technical Specifications
Parameters and characteristics for this part
| Specification | DG211BDJ-E3 |
|---|---|
| Channel Capacitance (CD(off)) | 5 pF |
| Channel Capacitance (CS(off)) | 5 pF |
| Channel-to-Channel Matching (ΔRon) | 2 Ohm |
| Charge Injection | 1 pC |
| Crosstalk | -95 dB |
| Current - Leakage (Max) | 500 pA |
| Demultiplexer Outputs | 1 |
| Mounting Type | Through Hole |
| Multiplexer Inputs | 1 |
| Number of Circuits | 4 |
| On-State Resistance (Max) | 85 Ohm |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.3 in |
| Package Name | 16-PDIP, 16-DIP |
| Package Width | 7.62 mm |
| Switch Circuit Type | SPST |
| Switch Contact | NC |
| Switch Time Toff (Max) | 200 ns |
| Switch Time Ton (Max) | 300 ns |
| Voltage - Supply, Dual (Maximum) | 22 V |
| Voltage - Supply, Dual (Minimum) | -4.5 V |
| Voltage - Supply, Dual (Nominal) | 4.5 V |
| Voltage - Supply, Single (V+) (Maximum) | 25 V |
| Voltage - Supply, Single (V+) (Minimum) | 4.5 V |
Pricing
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CAD
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Description
General part information
DG211 Series
The DG211BDJ-E3 is a single-pole single-throw (SPST) improved quad CMOS analog switch fabricated in Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed and lower power consumption. An improved charge injection compensation design minimizes switching transients. It can handle up to 22V and have an improved continuous current rating of 30mA. An epitaxial layer prevents latch-up. It feature true bidirectional performance in the on condition and will block signals to the supply levels in the off condition. The DG211B is a normally closed switch.
Documents
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