Discrete Semiconductor Products

SQS420EN-T1_GE3

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MOSFET N-CH 20V 8A PPAK1212-8

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Discrete Semiconductor Products

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MOSFET N-CH 20V 8A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQS420EN-T1_GE3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	14 nC
Input Capacitance (Ciss) (Max) @ Vds	490 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	18 W
Rds On (Max) @ Id, Vgs [Max]	28 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SQS420EN-T1_GE3	8 A	PowerPAK® 1212-8	14 nC	28 mOhm	8 V	18 W	1.8 V 4.5 V	-55 °C	175 ░C	20 V	PowerPAK® 1212-8	N-Channel	1.5 V	Surface Mount	MOSFET (Metal Oxide)	490 pF

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General part information

N-Channel 20 V 8A (Tc) 18W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources