Discrete Semiconductor Products

VS-MBR1035-M3

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DIODE SCHOTTKY 35V 10A TO220AC

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Discrete Semiconductor Products

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DIODE SCHOTTKY 35V 10A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-MBR1035-M3

Capacitance @ Vr, F	600 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-2
Speed	500 ns, 200 mA
Supplier Device Package	TO-220AC
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	35 V
Voltage - Forward (Vf) (Max) @ If [Max]	840 mV

Part	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Package / Case	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division VS-MBR1035-M3	Through Hole	150 °C	-65 C	TO-220AC	100 µA	10 A	200 mA 500 ns	840 mV	Schottky	TO-220-2	600 pF	35 V

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General part information

Diode 35 V 10A Through Hole TO-220AC

Technical documentation and resources