Specification	FJL4215OTU

Current - Collector (Ic) (Max) [Max]	17 A
Current - Collector Cutoff (Max) [Max]	5 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	80
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	TO-264AA, TO-264-3
Power - Max [Max]	150 W
Supplier Device Package	HPM F2
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	250 V

FJL4215 Series

PNP Epitaxial Silicon Transistor

Part	Package / Case	Mounting Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	Power - Max [Max]
ON Semiconductor FJL4215OTU	TO-264-3 TO-264AA	Through Hole	HPM F2	17 A	30 MHz	250 V	3 V	80	5 µA	150 °C	-50 °C	PNP	150 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources