Specification	FDA50N50

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	137 nC
Input Capacitance (Ciss) (Max) @ Vds	6460 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	625 W
Rds On (Max) @ Id, Vgs [Max]	105 mOhm
Supplier Device Package	TO-3PN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

FDA50N50 Series

Power MOSFET, N-Channel, UniFETTM, 500V, 48A, 105mΩ, TO-3P

Part	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDA50N50	Through Hole	SC-65-3 TO-3P-3	10 V	5 V	N-Channel	6460 pF	MOSFET (Metal Oxide)	500 V	625 W	105 mOhm	-55 °C	150 °C	48 A	20 V	TO-3PN	137 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDA50N50 Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.