Specification	BSP19AT1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	70 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	800 mW
Supplier Device Package	SOT-223 (TO-261)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	350 V

BSP19A Series

NPN Bipolar Transistor

Part	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector Cutoff (Max) [Max]	Mounting Type	Transistor Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor NSVBSP19AT1G	150 °C	-65 °C	SOT-223 (TO-261)	350 V	800 mW	500 mV	TO-261-4 TO-261AA	20 nA	Surface Mount	NPN	70 MHz	100 mA	40
ON Semiconductor BSP19AT1
ON Semiconductor BSP19AT1G	150 °C	-65 °C	SOT-223 (TO-261)	350 V	800 mW	500 mV	TO-261-4 TO-261AA	20 nA	Surface Mount	NPN	70 MHz	100 mA	40

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BSP19A Series

The NPN Bipolar Transistor is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.