VS-40MT120UHTAPBF

Obsolete

IGBT MODULE 1200V 80A 463W MTP

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Discrete Semiconductor Products

Obsolete

IGBT MODULE 1200V 80A 463W MTP

Technical Specifications

Parameters and characteristics for this part

Specification	VS-40MT120UHTAPBF

Configuration	Half Bridge
Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Cutoff (Max) [Max]	250 µA
IGBT Type	NPT
Input	Standard
Input Capacitance (Cies) @ Vce	8.28 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	12-MTP Module
Power - Max [Max]	463 W
Supplier Device Package	MTP
Vce(on) (Max) @ Vge, Ic	4.91 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Input Capacitance (Cies) @ Vce	Current - Collector (Ic) (Max) [Max]	Package / Case	NTC Thermistor	Input	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Mounting Type
Vishay General Semiconductor - Diodes Division VS-40MT120UHAPBF	Half Bridge	150 °C	-40 °C	250 µA	NPT	1200 V	463 W	8.28 nF	80 A	12-MTP Module		Standard	4.91 V	MTP	Chassis Mount
Vishay General Semiconductor - Diodes Division VS-40MT120UHTAPBF	Half Bridge	150 °C	-40 °C	250 µA	NPT	1200 V	463 W	8.28 nF	80 A	12-MTP Module		Standard	4.91 V	MTP	Chassis Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module NPT Half Bridge 1200 V 80 A 463 W Chassis Mount MTP

Technical documentation and resources

No documents available