Discrete Semiconductor Products

NTMJS2D5N06CLTWG

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T6 60V LL LFPAK/ REEL ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

T6 60V LL LFPAK/ REEL ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	NTMJS2D5N06CLTWG

Current - Continuous Drain (Id) @ 25°C	31 A, 164 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power Dissipation (Max)	3.9 W, 113 W
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NTMJS2D5N06CLTWG	2.4 mOhm	MOSFET (Metal Oxide)	52 nC	4.5 V 10 V	8-LFPAK56 SOT-1205	N-Channel	60 V	3600 pF	3.9 W 113 W	20 V	8-LFPAK	31 A 164 A	Surface Mount	2 V	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 31A (Ta), 164A (Tc) 3.9W (Ta), 113W (Tc) Surface Mount 8-LFPAK

Technical documentation and resources