Discrete Semiconductor Products

B80C800DM-E3/45

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BRIDGE RECT 1P 125V 900MA DFM

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Discrete Semiconductor Products

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BRIDGE RECT 1P 125V 900MA DFM

Technical Specifications

Parameters and characteristics for this part

Specification	B80C800DM-E3/45

Current - Average Rectified (Io)	900 mA
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	4-EDIP (0.300", 7.62mm)
Supplier Device Package	DFM
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1 V
Voltage - Peak Reverse (Max) [Max]	125 V

Part	Technology	Diode Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - Peak Reverse (Max) [Max]	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division B80C800G-E4/51	Standard	Single Phase	WOG	1 V	4-Circular WOG	-40 °C	125 ¯C	Through Hole	10 µA	125 V	900 mA
Vishay General Semiconductor - Diodes Division B80C1000G-E4/51	Standard	Single Phase	WOG	1 V	4-Circular WOG	-40 °C	125 ¯C	Through Hole	10 µA	125 V	1 A
Vishay General Semiconductor - Diodes Division B80C800DM-E3/45	Standard	Single Phase	DFM	1 V	4-EDIP (0.300" 7.62mm)	-40 °C	125 ¯C	Through Hole	10 µA	125 V	900 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 125 V Through Hole DFM

Technical documentation and resources