Discrete Semiconductor Products
DMTH10H015SPS-13
ActiveDiodes Inc
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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Discrete Semiconductor Products
DMTH10H015SPS-13
ActiveDiodes Inc
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH10H015SPS-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8.4 A, 50.5 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30.1 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 2343 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 55 W, 1.5 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs [Max] | 14.5 mOhm |
| Supplier Device Package | PowerDI5060-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
DMTH10H003SPSW Series
100V 175°C N-Channel Enhancement Mode MOSFET
| Part | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Technology | Vgs(th) (Max) @ Id | Mounting Type | Package / Case | Power Dissipation (Max) [Max] | Supplier Device Package | Grade | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Qualification | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | N-Channel | -55 °C | 175 ░C | 20 V | MOSFET (Metal Oxide) | 4 V | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2 W | TO-252 (DPAK) | Automotive | 23 mOhm | 1544 pF | 46.3 A | AEC-Q101 | 100 V | 6 V 10 V | |||||
 Diodes Inc | N-Channel | -55 °C | 175 ░C | 20 V | MOSFET (Metal Oxide) | 4 V | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | Automotive | 4468 pF | 11.8 A 123 A | AEC-Q101 | 100 V | 6 V 10 V | 8.8 mOhm | 1.5 W | 56.4 nC | ||||
Diodes Inc | N-Channel | -55 °C | 175 ░C | 20 V | MOSFET (Metal Oxide) | 3 V | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252 (DPAK) | Automotive | 22 mOhm | 1477 pF | 51.7 A | AEC-Q101 | 100 V | 4.5 V 10 V | 3.1 W | 21 nC | ||||
 Diodes Inc | N-Channel | -55 °C | 175 ░C | 20 V | MOSFET (Metal Oxide) | 3.5 V | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252-3 | Automotive | 30 mOhm | 1871 pF | 28 A | AEC-Q101 | 100 V | 6 V 10 V | 2.1 W | 33.3 nC | ||||
Diodes Inc | N-Channel | -55 °C | 175 ░C | 20 V | MOSFET (Metal Oxide) | 4 V | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | Automotive | 2343 pF | 8.4 A 50.5 A | AEC-Q101 | 100 V | 6 V 10 V | 14.5 mOhm | 1.5 W 55 W | 30.1 nC | ||||
 Diodes Inc | N-Channel | -55 °C | 175 ░C | 20 V | MOSFET (Metal Oxide) | 4 V | Surface Mount | 8-PowerTDFN | PowerDI5060-8 (Type Q) | 3 mOhm | 5542 pF | 166 A | 100 V | 6 V 10 V | 2.6 W | 85 nC | 167 W | |||||
 Diodes Inc | N-Channel | -55 °C | 175 ░C | 20 V | MOSFET (Metal Oxide) | 3.5 V | Through Hole | TO-220-3 | TO-220-3 | 9.5 mOhm | 2592 pF | 108 A | 100 V | 10 V | 2.4 W 166 W | 53.7 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2500 | $ 0.44 | |
| 5000 | $ 0.41 | |||
| 7500 | $ 0.40 | |||
Description
General part information
DMTH10H003SPSW Series
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: power-management functions, DC-DC converters, and backlighting.
Documents
Technical documentation and resources