Discrete Semiconductor Products

FDD6782A

Obsolete

MOSFET N-CH 25V 20A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 20A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	FDD6782A

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Input Capacitance (Ciss) (Max) @ Vds	1065 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	31 W, 3.7 W
Rds On (Max) @ Id, Vgs [Max]	10.5 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDD6782A	1065 pF	-55 °C	175 ░C	10.5 mOhm	N-Channel	25 V	20 V	3.7 W 31 W	TO-252AA	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	3 V	MOSFET (Metal Oxide)	Surface Mount	27 nC	20 A
ON Semiconductor FDD6780	1590 pF	-55 °C	175 ░C		N-Channel	25 V	20 V	3.7 W 32.6 W	TO-252AA	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	3 V	MOSFET (Metal Oxide)	Surface Mount		16.5 A 30 A	8.5 mOhm	29 nC
ON Semiconductor FDD6782A	1065 pF	-55 °C	175 ░C	10.5 mOhm	N-Channel	25 V	20 V	3.7 W 31 W	TO-252 (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	3 V	MOSFET (Metal Oxide)	Surface Mount	27 nC	20 A

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General part information

N-Channel 25 V 20A (Ta) 3.7W (Ta), 31W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources