Discrete Semiconductor Products

SIR410DP-T1-GE3

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MOSFET N-CH 20V 35A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 20V 35A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR410DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	36 W, 4.2 W
Rds On (Max) @ Id, Vgs	4.8 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type
Vishay General Semiconductor - Diodes Division SIR410DP-T1-GE3	20 V	PowerPAK® SO-8	2.5 V	1600 pF	35 A	MOSFET (Metal Oxide)	-55 °C	150 °C	PowerPAK® SO-8	20 V	41 nC	4.5 V 10 V	Surface Mount	4.2 W 36 W	4.8 mOhm	N-Channel

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General part information

N-Channel 20 V 35A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources