Discrete Semiconductor Products

VIT3080S-M3/4W

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DIODE SCHOTTKY 80V 30A TO262AA

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Discrete Semiconductor Products

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DIODE SCHOTTKY 80V 30A TO262AA

Technical Specifications

Parameters and characteristics for this part

Specification	VIT3080S-M3/4W

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Speed	500 ns, 200 mA
Supplier Device Package	TO-262AA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If [Max]	950 mV

Part	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io) (per Diode)	Package / Case	Diode Configuration	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Grade	Qualification	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division VIT3080C-M3/4W	TO-262AA	80 V	15 A	I2PAK TO-262-3 Long Leads TO-262AA	1 Pair Common Cathode	-55 °C	150 °C	Automotive	AEC-Q101	700 µA	Schottky	820 mV	Through Hole	200 mA 500 ns
Vishay General Semiconductor - Diodes Division VIT3080S-M3/4W	TO-262AA	80 V		I2PAK TO-262-3 Long Leads TO-262AA		-55 °C	150 °C			1 mA	Schottky		Through Hole	200 mA 500 ns	950 mV	30 A
Vishay General Semiconductor - Diodes Division VIT3080CHM3/4W	TO-262AA	80 V	15 A	I2PAK TO-262-3 Long Leads TO-262AA	1 Pair Common Cathode	-55 °C	150 °C	Automotive	AEC-Q101	700 µA	Schottky	820 mV	Through Hole	200 mA 500 ns

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General part information

Diode 80 V 30A Through Hole TO-262AA

Technical documentation and resources