Discrete Semiconductor Products
NTHL022N120M3S
ActiveON Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 68 A, 1.2 KV, 0.022 OHM, TO-247
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Discrete Semiconductor Products
NTHL022N120M3S
ActiveON Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 68 A, 1.2 KV, 0.022 OHM, TO-247
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NTHL022N120M3S |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 68 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 139 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 352 W |
| Rds On (Max) @ Id, Vgs | 30 mOhm |
| Supplier Device Package | TO-247-3 |
| Vgs (Max) [Max] | 22 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 4.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 18.30 | |
| 10 | $ 16.13 | |||
| 450 | $ 12.64 | |||
| Newark | Each | 1 | $ 17.53 | |
| 10 | $ 13.10 | |||
| 25 | $ 13.10 | |||
| 50 | $ 13.10 | |||
| 100 | $ 13.09 | |||
| 250 | $ 13.09 | |||
| ON Semiconductor | N/A | 1 | $ 11.51 | |
Description
General part information
NTHL022N120M3S Series
The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Documents
Technical documentation and resources