Specification	FDMS7572S

Current - Continuous Drain (Id) @ 25°C	23 A, 49 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5 W, 46 W
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMS7572S Series

N-Channel PowerTrench® SyncFET™ 25V, 49A, 2.9mΩ

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Package / Case	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
ON Semiconductor FDMS7572S	N-Channel	45 nC	Surface Mount	8-PowerTDFN	MOSFET (Metal Oxide)	25 V	4.5 V 10 V	20 V	23 A 49 A	2.5 W 46 W	3 V	-55 °C	150 °C	8-PQFN (5x6)
ON Semiconductor FDMS7572S	N-Channel	45 nC	Surface Mount	8-PowerTDFN	MOSFET (Metal Oxide)	25 V	4.5 V 10 V	20 V	23 A 49 A	2.5 W 46 W	3 V	-55 °C	150 °C	8-PQFN (5x6)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	329	$ 0.91
		329	$ 0.91
	Digi-Reel®	1	$ 1.80
		1	$ 1.80

Description

General part information

FDMS7572S Series

The FDMS7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

Documents

Technical documentation and resources

Package Drawing-483AE-PQFN8 5x6, 1.27P

Package Drawing