Specification	SSM6J505NU,LF

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	37.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2700 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	1.25 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	6 V
Vgs(th) (Max) @ Id	1 V

SSM6J505NU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -12 V, -12 A, 0.012 Ω@4.5V, SOT-1220(UDFN6B)

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Supplier Device Package	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM6J505NU,LF	2700 pF	37.6 nC	12 A	150 °C	6 V	MOSFET (Metal Oxide)	1 V	P-Channel	Surface Mount	6-UDFNB (2x2)	1.25 W	12 mOhm	1.2 V	4.5 V	12 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -12 V, -12 A, 0.012 Ω@4.5V, SOT-1220(UDFN6B)

Technical documentation and resources