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Technical Specifications
Parameters and characteristics for this part
| Specification | HUFA76609D3ST |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 16 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 425 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 49 W |
| Rds On (Max) @ Id, Vgs | 160 mOhm |
| Supplier Device Package | TO-252AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) @ Id | 3 V |
| Part | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Technology | FET Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 60 V | 4.5 V 10 V | 16 V | -55 °C | 175 ░C | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 34 nC | 35 A | 3 V | MOSFET (Metal Oxide) | N-Channel | 30 mOhm | 1060 pF | 85 W | TO-263 (D2PAK) | ||
ON Semiconductor | 100 V | 4.5 V 10 V | 16 V | -55 °C | 175 ░C | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 75 A | 3 V | MOSFET (Metal Oxide) | N-Channel | 14 mOhm | 4400 pF | 310 W | TO-263 (D2PAK) | 153 nC | ||
ON Semiconductor | 100 V | 4.5 V 10 V | 16 V | -55 °C | 175 ░C | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 10 A | 3 V | MOSFET (Metal Oxide) | N-Channel | 160 mOhm | 425 pF | TO-252AA | 16 nC | 49 W | ||
ON Semiconductor | 100 V | 4.5 V 10 V | 16 V | -55 °C | 175 ░C | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 75 A | 3 V | MOSFET (Metal Oxide) | N-Channel | 14 mOhm | 4400 pF | 310 W | TO-263 (D2PAK) | 153 nC | ||
ON Semiconductor | 100 V | 4.5 V 10 V | 16 V | -55 °C | 175 ░C | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 10 A | 3 V | MOSFET (Metal Oxide) | N-Channel | 160 mOhm | 425 pF | TO-252 (DPAK) | 16 nC | 49 W | ||
ON Semiconductor | 60 V | 4.5 V 10 V | 16 V | -55 °C | 175 ░C | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 46 nC | 20 A | 3 V | MOSFET (Metal Oxide) | N-Channel | 23 mOhm | 1480 pF | 110 W | TO-252AA | ||
ON Semiconductor | 60 V | 4.5 V 10 V | 16 V | -55 °C | 175 ░C | Through Hole | TO-220-3 | 75 A | 3 V | MOSFET (Metal Oxide) | N-Channel | 12 mOhm | 2745 pF | TO-220-3 | 84 nC | 155 W | ||
ON Semiconductor | 100 V | 4.5 V 10 V | 16 V | -55 °C | 175 ░C | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 51 A | 3 V | MOSFET (Metal Oxide) | N-Channel | 26 mOhm | 2400 pF | TO-263 (D2PAK) | 86 nC | 180 W | ||
ON Semiconductor | 60 V | 4.5 V 10 V | 16 V | -55 °C | 175 ░C | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 75 A | 3 V | MOSFET (Metal Oxide) | N-Channel | 8 mOhm | 4115 pF | TO-263 (D2PAK) | 129 nC | 260 W | ||
ON Semiconductor | 60 V | 4.5 V 10 V | 16 V | -55 °C | 175 ░C | Through Hole | IPAK TO-251-3 Short Leads TO-251AA | 20 A | 3 V | MOSFET (Metal Oxide) | N-Channel | 37 mOhm | 900 pF | IPAK | 27.5 nC | 75 W |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 701 | $ 0.43 | |
| 701 | $ 0.43 | |||
Description
General part information
HUFA76 Series
N-Channel 100 V 10A (Tc) 49W (Tc) Surface Mount TO-252 (DPAK)
Documents
Technical documentation and resources