BYW76RAS15-10-PH

Obsolete

DIODE GEN PURP 600V 3A SOD64

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 600V 3A SOD64

Technical Specifications

Parameters and characteristics for this part

Specification	BYW76RAS15-10-PH

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOD-64, Axial
Reverse Recovery Time (trr)	200 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-64
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Mounting Type	Technology	Speed	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division BYW76TAP	Through Hole	Avalanche	200 mA 500 ns	1.1 V	3 A	600 V	SOD-64	200 ns	175 ░C	-55 C	Axial SOD-64	5 µA
Vishay General Semiconductor - Diodes Division BYW76RAS15-10-PH	Through Hole	Standard	200 mA 500 ns	1 V	3 A	600 V	SOD-64	200 ns	175 ░C	-55 C	Axial SOD-64	5 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 3A Through Hole SOD-64

Technical documentation and resources

No documents available