Discrete Semiconductor Products

NDBA170N06AT4H

Obsolete

MOSFET N-CH 60V 170A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 170A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	NDBA170N06AT4H

Current - Continuous Drain (Id) @ 25°C	170 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	280 nC
Input Capacitance (Ciss) (Max) @ Vds	15800 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	3.3 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

Part	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package
ON Semiconductor NDBA170N06AT4H	N-Channel	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C	3.3 mOhm	15800 pF	10 V	170 A	MOSFET (Metal Oxide)	280 nC	20 V	90 W	2.6 V	Surface Mount	TO-263 (D2PAK)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 170A (Ta) 90W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources

No documents available